? semiconductor components industries, llc, 2012 january, 2012 ? rev. 1 1 publication order number: mbr1080/d mbr1080g, mbr1090g, mbr10100g, NRVB10100G switchmode power rectifiers features ? guard ? ring for stress protection ? low forward voltage ? 175 ? c operating junction temperature ? epoxy meets ul 94 v ? 0 @ 0.125 in ? low power loss/high efficiency ? high surge capacity ? low stored charge majority carrier conduction ? aec ? q101 qualified and ppap capable ? nrvb prefix for automotive and other applications requiring unique site and control change requirements ? all packages are pb ? free* mechanical characteristics ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 ? c max. for 10 seconds ? esd rating: ? human body model = 3b ? machine model = c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. schottky barrier rectifiers 10 amperes, 80 to 100 volts 3 1, 4 to ? 220ac case 221b marking diagram ay wwg b10x0 ka device package shipping ordering information mbr10100g to ? 220 (pb ? free) 50 units/rail http://onsemi.com mbr1090g to ? 220 (pb ? free) 50 units/rail a = assembly location y = year ww = work week g = pb ? free package b10x0 = device code x = 8, 9 or 10 ka = diode polarity mbr1080g to ? 220 (pb ? free) 50 units/rail NRVB10100G to ? 220 (pb ? free) 50 units/rail
mbr1080g, mbr1090g, mbr10100g, NRVB10100G http://onsemi.com 2 maximum ratings rating symbol mbr/nrvb unit 1080 1090 10100 peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 80 90 100 v average rectified forward current (rated v r ) t c = 133 ? c i f(av) 10 a peak repetitive forward current (rated v r , square wave, 20 khz) t c = 133 ? c i frm 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 150 a peak repetitive reverse surge current (2.0 s, 1.0 khz) i rrm 0.5 a operating junction temperature (note 1) t j 65 to +175 ? c storage temperature t stg 65 to +175 ? c voltage rate of change (rated v r ) dv/dt 10,000 v/ s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit maximum thermal resistance, junction ? to ? case r jc 2.0 ? c/w maximum thermal resistance, junction ? to ? ambient r ja 60 ? c/w electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 2) (i f = 10 amps, t c = 125 ? c) (i f = 10 amps, t c = 25 ? c) (i f = 20 amps, t c = 125 ? c) (i f = 20 amps, t c = 25 ? c) v f 0.7 0.8 0.85 0.95 v maximum instantaneous reverse current (note 2) (rated dc voltage, t c = 125 ? c) (rated dc voltage, t c = 25 ? c) i r 6.0 0.10 ma 2. pulse test: pulse width = 300 s, duty cycle ? 2.0%.
mbr1080g, mbr1090g, mbr10100g, NRVB10100G http://onsemi.com 3 figure 1. typical forward voltage figure 2. typical reverse current figure 3. typical current derating, case figure 4. typical current derating, ambient figure 5. forward power dissipation 0.6 0 v f , instantaneous voltage (volts) 20 50 10 2.0 4.0 0 i f(av) , average current (amps) 10 4.0 3.0 2.0 1.0 0 3.0 i f , instantaneous forward current (amps) 5.0 3.0 0.2 0.4 0.8 p 5.0 10 6.0 7.0 1.0 0.5 1.0 1.0 7.0 8.0 9.0 5.0 6.0 t j = 25 ? c 150 ? c , average power dissipation (watts) f(av) square wave dc t a = 25 ? c 125 ? c 100 ? c 0.5 0.1 0.3 0.7 0.9 9.0 8.0 i pk /i av = i pk /i av = 5.0 i pk /i av = 10 i pk /i av = 20 v r , reverse voltage (volts) 0 i 20 40 60 80 0.1 1.0 , reverse current (ma) r 10 t j = 150 ? c 125 ? c 100 ? c 0.01 25 ? c 100 0.0001 0.001 80 t c , case temperature ( ? c) 15 0 i 100 120 140 160 , average forward current (amps) f(av) square wave dc 10 20 rated voltage applied r jc = 2 ? c/w 180 5.0 t a , ambient temperature ( ? c) 20 0 20 0 40 i f(av) , average forward current (amps) 60 80 160 dc 15 10 100 120 140 rated voltage applied square wave dc (heatsink) r ja = 16 ? c/w (no heatsink) r ja = 60 ? c/w 5.0 180
mbr1080g, mbr1090g, mbr10100g, NRVB10100G http://onsemi.com 4 package dimensions to ? 220 case 221b ? 04 issue e b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.035 0.64 0.89 f 0.142 0.161 3.61 4.09 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbr1080/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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